IPS80R600P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 8A TO251-3
$0.83
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.64600
100+
$1.30110
500+
$1.00906
1,000+
$0.79662
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPS80R600P7AKMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPS80R600P7AKMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-342
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
STMicroelectronics
STP130N8F7
Fairchild Semiconductor
FQA38N30
STMicroelectronics
STB6NK90ZT4
IXYS
IXTH52P10P
Nexperia USA Inc.
BUK7D25-40EX
Renesas Electronics America Inc
NP100N04PUK-E1-AY
Diodes Incorporated
ZVN0545A
Torex Semiconductor Ltd
XP231P0201TR-G
Infineon Technologies
IPP65R150CFDAAKSA1
STMicroelectronics