IPT012N08N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 300A 8HSOF
$7.49
Available to order
Reference Price (USD)
2,000+
$3.90691
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPT012N08N5ATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPT012N08N5ATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
STMicroelectronics
STD4N62K3
Alpha & Omega Semiconductor Inc.
AON7408
STMicroelectronics
STF7NM60N
onsemi
FDMS86201
NTE Electronics, Inc
NTE491T
Alpha & Omega Semiconductor Inc.
AON7516
Rohm Semiconductor
RQ5L020SNTL
Infineon Technologies
IPP80P03P4L04AKSA1
Vishay Siliconix
SUD50P04-09L-E3
Alpha & Omega Semiconductor Inc.