IPT60R040S7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 13A 8HSOF
$12.31
Available to order
Reference Price (USD)
1+
$12.31000
500+
$12.1869
1000+
$12.0638
1500+
$11.9407
2000+
$11.8176
2500+
$11.6945
Exquisite packaging
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The IPT60R040S7XTMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-2
- Package / Case: 8-PowerSFN
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