IPT60R125CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 21A 8HSOF
$6.13
Available to order
Reference Price (USD)
1+
$6.13000
500+
$6.0687
1000+
$6.0074
1500+
$5.9461
2000+
$5.8848
2500+
$5.8235
Exquisite packaging
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Meet the IPT60R125CFD7XTMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPT60R125CFD7XTMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 127W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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