IPTG011N08NM5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 42A/408A HSOG-8
$9.27
Available to order
Reference Price (USD)
1+
$9.27000
500+
$9.1773
1000+
$9.0846
1500+
$8.9919
2000+
$8.8992
2500+
$8.8065
Exquisite packaging
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The IPTG011N08NM5ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPTG011N08NM5ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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