IPTG018N08NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOG-8
$2.98
Available to order
Reference Price (USD)
1+
$2.97600
500+
$2.94624
1000+
$2.91648
1500+
$2.88672
2000+
$2.85696
2500+
$2.8272
Exquisite packaging
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The IPTG018N08NM5ATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 159µA
- Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSFN
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