Shopping cart

Subtotal: $0.00

IPW50R190CEFKSA1

Infineon Technologies
IPW50R190CEFKSA1 Preview
Infineon Technologies
MOSFET N-CH 500V 18.5A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 510µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 127W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3

Related Products

Infineon Technologies

IRLZ34NSPBF

Infineon Technologies

IRFR3910PBF

Fairchild Semiconductor

NDS336P

Alpha & Omega Semiconductor Inc.

AON7556

STMicroelectronics

STD18N65M2-EP

Alpha & Omega Semiconductor Inc.

AOB442

Top