IPW60R070P6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 53.5A TO247-3
$9.96
Available to order
Reference Price (USD)
1+
$8.13000
10+
$7.36800
240+
$6.15213
720+
$5.23967
1,200+
$4.63138
Exquisite packaging
Discount
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The IPW60R070P6XKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPW60R070P6XKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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