IPW65R018CFD7XKSA1
Infineon Technologies
Infineon Technologies
650 V COOLMOS CFD7 SUPERJUNCTION
$28.51
Available to order
Reference Price (USD)
1+
$28.51000
500+
$28.2249
1000+
$27.9398
1500+
$27.6547
2000+
$27.3696
2500+
$27.0845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPW65R018CFD7XKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPW65R018CFD7XKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
Micro Commercial Co
MCG30P03-TP
Renesas Electronics America Inc
RJK0348DPA-00#J0
Fairchild Semiconductor
FCP165N65S3R0
onsemi
NTNS41S006PZTCG
Harris Corporation
IRF632
Infineon Technologies
ISC010N06NM5ATMA1
onsemi
NTMFS4931NT1G-IRH1
Renesas Electronics America Inc
2SK2499-Z-AZ
Vishay Siliconix
SQJ401EP-T2_GE3
onsemi