IPW65R019C7
Infineon Technologies
Infineon Technologies
75A, 650V, 0.019OHM, N-CHANNEL M
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPW65R019C7 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPW65R019C7 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.92mA
- Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
onsemi
FDI2532
NXP USA Inc.
2N7002PT,115
Infineon Technologies
SPB07N60C3
Toshiba Semiconductor and Storage
2SK3670(T6CANO,A,F
IXYS
IXTQ182N055T
Infineon Technologies
IRF3707ZSTRRP
Infineon Technologies
IRFU3504PBF
Infineon Technologies
IRFS5615PBF
Infineon Technologies
IRFR12N25DTRPBF
Fairchild Semiconductor