IPW65R022CFD7AXKSA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO247-3
$25.39
Available to order
Reference Price (USD)
1+
$25.38721
500+
$25.1333379
1000+
$24.8794658
1500+
$24.6255937
2000+
$24.3717216
2500+
$24.1178495
Exquisite packaging
Discount
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The IPW65R022CFD7AXKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPW65R022CFD7AXKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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