IPW65R075CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 32A TO247-3-41
$12.66
Available to order
Reference Price (USD)
1+
$12.66000
500+
$12.5334
1000+
$12.4068
1500+
$12.2802
2000+
$12.1536
2500+
$12.027
Exquisite packaging
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Discover the IPW65R075CFD7AXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPW65R075CFD7AXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 820µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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