IPW65R190CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 14A TO247-3
$5.36
Available to order
Reference Price (USD)
1+
$5.36000
500+
$5.3064
1000+
$5.2528
1500+
$5.1992
2000+
$5.1456
2500+
$5.092
Exquisite packaging
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The IPW65R190CFD7AXKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPW65R190CFD7AXKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Infineon Technologies