IR11662SPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR LOW-SIDE 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$2.14000
10+
$1.92100
100+
$1.54430
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's IR11662SPBF represents the cutting edge of PMIC - Gate Driver technology, engineered to deliver unmatched switching performance for power electronics. This IC classification specializes in synchronous rectification and half-bridge configurations with integrated bootstrap diodes. Notable characteristics comprise UVLO protection, programmable turn-on/off thresholds, and 4A peak output current capacity. Primary applications span data center power supplies, welding equipment, and DC-DC converters. A concrete example: the IR11662SPBF enables 98% efficiency in 1kW telecom power modules while withstanding 100V/ns common-mode transients. The device's reinforced isolation meets IEC 61800-5-1 standards, particularly valuable for medical imaging systems and railway traction converters.
Specifications
- Product Status: Discontinued at Digi-Key
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 11.4V ~ 18V
- Logic Voltage - VIL, VIH: 2V, 2.15V
- Current - Peak Output (Source, Sink): 1A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 21ns, 10ns
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Renesas Electronics America Inc
ISL6612IBZ-TR5238
Analog Devices Inc.
ADP3414JR
IXYS
IX4R11S3T/R
Renesas Electronics America Inc
PX3511DDDG-RA
Infineon Technologies
IRS2608DSTRPBF
Vishay Siliconix
SI9912DY-E3
Renesas Electronics America Inc
ISL89163FRTCZ-T
Texas Instruments
UCC27425DRG4
Renesas Electronics America Inc
ISL6620AIBZ-T
STMicroelectronics