IR2112SPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 16SOIC
$4.17
Available to order
Reference Price (USD)
1+
$4.17000
500+
$4.1283
1000+
$4.0866
1500+
$4.0449
2000+
$4.0032
2500+
$3.9615
Exquisite packaging
Discount
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Engineered for mission-critical applications, Infineon Technologies's IR2112SPBF PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The IR2112SPBF proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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