IR2151STR
Infineon Technologies
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$1.93200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents the IR2151STR as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 125mA, 250mA
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Microchip Technology
TC4404MJA
Analog Devices Inc./Maxim Integrated
MAX25615AUT/V+
Microchip Technology
MIC4422ACM
Infineon Technologies
IR2112S
Microchip Technology
MIC4422ABN
IXYS
IXDN402SI
Infineon Technologies
IR44272LTRPBF
Microchip Technology
MIC4424BWM
IXYS
IXDI502SIAT/R
Infineon Technologies