IR2233
Infineon Technologies
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28DIP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's IR2233 represents the cutting edge of PMIC - Gate Driver technology, engineered to deliver unmatched switching performance for power electronics. This IC classification specializes in synchronous rectification and half-bridge configurations with integrated bootstrap diodes. Notable characteristics comprise UVLO protection, programmable turn-on/off thresholds, and 4A peak output current capacity. Primary applications span data center power supplies, welding equipment, and DC-DC converters. A concrete example: the IR2233 enables 98% efficiency in 1kW telecom power modules while withstanding 100V/ns common-mode transients. The device's reinforced isolation meets IEC 61800-5-1 standards, particularly valuable for medical imaging systems and railway traction converters.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-PDIP
Related Products
IXYS
IXDD509PI
Renesas Electronics America Inc
ISL6612AEIBZ
Renesas Electronics America Inc
ISL6610IRZ
Infineon Technologies
IR2131PBF
onsemi
NCP5901EMNTBG
IXYS
IXDN502PI
Analog Devices Inc./Maxim Integrated
MAX620EWN+T
Infineon Technologies
IRS2332JTRPBF
Diodes Incorporated
DGD2101S8-13
Renesas Electronics America Inc