IRD3CH101DB6
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 200A DIE
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The IRD3CH101DB6 from Infineon Technologies is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Infineon Technologies's dedication to quality means the IRD3CH101DB6 meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 200 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 360 ns
- Current - Reverse Leakage @ Vr: 3.6 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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