IRF150P221AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 186A TO247-3
$9.03
Available to order
Reference Price (USD)
1+
$9.03000
500+
$8.9397
1000+
$8.8494
1500+
$8.7591
2000+
$8.6688
2500+
$8.5785
Exquisite packaging
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Meet the IRF150P221AKMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF150P221AKMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 264µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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