IRF3709ZS
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
$0.00
Available to order
Reference Price (USD)
250+
$2.11436
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF3709ZS from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF3709ZS for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
NXP USA Inc.
BUK7213-40A,118
Toshiba Semiconductor and Storage
TK60D08J1(Q)
Vishay Siliconix
IRFR214TRR
Microsemi Corporation
APT10035B2LLG
Infineon Technologies
IRFR3706CTRRPBF
Infineon Technologies
IRF6610TR1PBF
EPC
EPC2031ENGRT
Alpha & Omega Semiconductor Inc.
AOT12N60
Vishay Siliconix
SUD50N04-05L-E3
Infineon Technologies