IRF3710STRR
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 57A D2PAK
$0.00
Available to order
Reference Price (USD)
800+
$2.12850
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF3710STRR by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
2SK3662(F)
IXYS
IXFT60N25Q
Fairchild Semiconductor
IRF740B
onsemi
NVMFS6B75NLWFT3G
Rohm Semiconductor
RSD160P05TL
Infineon Technologies
BUZ73AE3046
onsemi
ATP213-TL-H
Infineon Technologies
IRF3711SPBF
Fairchild Semiconductor
IRFP350A
Infineon Technologies