IRF512
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF512 from Harris Corporation redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IRF512 offers the precision and reliability you need. Trust Harris Corporation to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 740mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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