IRF520NSTRLPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 9.7A D2PAK
$1.55
Available to order
Reference Price (USD)
1+
$1.55000
500+
$1.5345
1000+
$1.519
1500+
$1.5035
2000+
$1.488
2500+
$1.4725
Exquisite packaging
Discount
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The IRF520NSTRLPBF from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IRF520NSTRLPBF offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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