IRF5803D2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 3.4A 8SO
$0.00
Available to order
Reference Price (USD)
95+
$0.83158
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF5803D2 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IRF5803D2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
IRFR310TRR
Diodes Incorporated
ZVP4105A
Vishay Siliconix
IRLL1503TR
NXP USA Inc.
NX3008NBKV/S500115
MaxLinear, Inc.
XR46000ESETR
Infineon Technologies
IPI120N06S4H1AKSA2
Infineon Technologies
IRL3303D1STRL
Renesas Electronics America Inc
RJL5012DPE-00#J3
Infineon Technologies
IRF3805
onsemi