IRF60B217
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 60A TO220AB
$1.93
Available to order
Reference Price (USD)
1+
$1.93000
500+
$1.9107
1000+
$1.8914
1500+
$1.8721
2000+
$1.8528
2500+
$1.8335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF60B217 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF60B217 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Texas Instruments
CSD18511Q5AT
STMicroelectronics
STH240N75F3-2
IXYS
IXTA300N04T2
Alpha & Omega Semiconductor Inc.
AOT1404L
Renesas Electronics America Inc
UPA1820GR-9JG-E1-A
Sanken
EKV550
onsemi
FDMS10C4D2N
IXYS
IXTA60N10T
IXYS
IXTP120P065T
Infineon Technologies