IRF640PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 18A TO220AB
$2.08
Available to order
Reference Price (USD)
1+
$2.08000
500+
$2.0592
1000+
$2.0384
1500+
$2.0176
2000+
$1.9968
2500+
$1.976
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRF640PBF-BE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF640PBF-BE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMN2009LSS-13
Infineon Technologies
BSZ0902NSIATMA1
Infineon Technologies
BSZ013NE2LS5IATMA1
Infineon Technologies
IPLK80R750P7ATMA1
Alpha & Omega Semiconductor Inc.
AO4430
Rohm Semiconductor
R6007KNX
Toshiba Semiconductor and Storage
SSM3K44FS,LF
Vishay Siliconix
SQJ180EP-T1_GE3
Infineon Technologies
IPP220N25NFDAKSA1
onsemi