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IRF6601

Infineon Technologies
IRF6601 Preview
Infineon Technologies
MOSFET N-CH 20V 26A DIRECTFET
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT

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