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IRF7233

Infineon Technologies
IRF7233 Preview
Infineon Technologies
MOSFET P-CH 12V 9.5A 8SO
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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