IRF7379PBF
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 30V 8-SOIC
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Choose the IRF7379PBF from Infineon Technologies for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the IRF7379PBF stands out for its reliability and efficiency. Infineon Technologies's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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