IRF7832PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 20A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$1.47000
10+
$1.30200
100+
$1.02920
500+
$0.79818
1,000+
$0.63014
Exquisite packaging
Discount
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Enhance your electronic projects with the IRF7832PBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRF7832PBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.32V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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