IRF7834PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 19A 8SO
$0.00
Available to order
Reference Price (USD)
3,800+
$0.61880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRF7834PBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRF7834PBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Fairchild Semiconductor
FQB20N06LTM
Vishay Siliconix
SI6443DQ-T1-E3
Infineon Technologies
IRLR6225PBF
Infineon Technologies
IPP80N06S3L-05
IXYS
IXFX52N60Q2
Infineon Technologies
IPB45N06S409ATMA2
Vishay Siliconix
SUM75N15-18P-E3
Vishay Siliconix
SIA811DJ-T1-E3
IXYS
IXFN180N10
onsemi