Shopping cart

Subtotal: $0.00

IRF9520NS

Infineon Technologies
IRF9520NS Preview
Infineon Technologies
MOSFET P-CH 100V 6.8A D2PAK
$0.00
Available to order
Reference Price (USD)
400+
$1.37500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Infineon Technologies

IPB049N06L3GATMA1

Infineon Technologies

IRL1104PBF

Rohm Semiconductor

RSD050N06TL

Vishay Siliconix

IRFR9220

Infineon Technologies

SPP11N80C3

Vishay Siliconix

IRFZ14STRL

Toshiba Semiconductor and Storage

SSM3J114TU(T5L,T)

Renesas Electronics America Inc

RJK2057DPA-WS#J0

Alpha & Omega Semiconductor Inc.

AON6524

Nexperia USA Inc.

PSMN1R6-30BL,118

Top