IRF9540NSTRRPBF
Infineon Technologies
         
                
                                Infineon Technologies                            
                        
                                MOSFET P-CH 100V 23A D2PAK                            
                        $1.89
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.89000
                                        500+
                                            $1.8711
                                        1000+
                                            $1.8522
                                        1500+
                                            $1.8333
                                        2000+
                                            $1.8144
                                        2500+
                                            $1.7955
                                        Exquisite packaging
                            Discount
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                    The IRF9540NSTRRPBF by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IRF9540NSTRRPBF is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.                
            Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    