IRFB31N20DPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 31A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$2.53000
10+
$2.30200
100+
$1.87560
500+
$1.48854
1,000+
$1.25628
Exquisite packaging
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Enhance your electronic projects with the IRFB31N20DPBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRFB31N20DPBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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