IRFBA90N20DPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 98A SUPER-220
$0.00
Available to order
Reference Price (USD)
1+
$7.20000
50+
$5.90540
100+
$5.32930
500+
$4.46506
1,000+
$3.88892
Exquisite packaging
Discount
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The IRFBA90N20DPBF from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRFBA90N20DPBF for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 59A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 650W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-220™ (TO-273AA)
- Package / Case: TO-273AA
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