IRFD024
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 2.5A 4DIP
$0.00
Available to order
Reference Price (USD)
2,500+
$1.91653
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRFD024 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFD024 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
Related Products
Infineon Technologies
IPB05N03LA G
Toshiba Semiconductor and Storage
TPCC8006-H(TE12LQM
Renesas Electronics America Inc
RJL6013DPE-00#J3
Infineon Technologies
BTS244ZNKSA1
IXYS
IXTQ150N06P
IXYS
IXTA44N30T
Infineon Technologies
SPP80N04S2-04
Alpha & Omega Semiconductor Inc.
AO3160
Toshiba Semiconductor and Storage
TPCC8008(TE12L,QM)
Infineon Technologies