IRFH7932TR2PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 24A PQFN56
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRFH7932TR2PBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFH7932TR2PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6) Single Die
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
IRF530S
IXYS
IXFV16N80P
onsemi
IRFR224BTM_TC002
Diodes Incorporated
ZXMN3A03E6TC
Vishay Siliconix
IRLZ34S
Taiwan Semiconductor Corporation
TSM3N90CZ C0G
Infineon Technologies
BSZ050N03LSG
Panasonic Electronic Components
MTM861240LBF
onsemi
FQD2N30TM
Infineon Technologies