IRFH8307TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 42A/100A 8PQFN
$1.84
Available to order
Reference Price (USD)
4,000+
$0.74250
8,000+
$0.71500
12,000+
$0.70000
Exquisite packaging
Discount
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Meet the IRFH8307TRPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFH8307TRPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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