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IRFHM830DTRPBF

Infineon Technologies
IRFHM830DTRPBF Preview
Infineon Technologies
MOSFET N-CH 30V 20A/40A PQFN
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (3x3)
  • Package / Case: 8-VQFN Exposed Pad

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