IRFI610G
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 2.6A TO220-3
$0.00
Available to order
Reference Price (USD)
500+
$0.96250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFI610G from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's IRFI610G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Renesas Electronics America Inc
2SK4151TZ-E
Alpha & Omega Semiconductor Inc.
AO4474
Infineon Technologies
SPP03N60S5HKSA1
onsemi
NTD3055L170G
Infineon Technologies
IRLL3303
Infineon Technologies
IRF7779L2TR1PBF
Vishay Siliconix
SI7405BDN-T1-GE3
Alpha & Omega Semiconductor Inc.
AOD2610_001
onsemi
NVTJD4105CT1G
Infineon Technologies