IRFP22N60K
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 22A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFP22N60K by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Nexperia USA Inc.
BUK9504-40A,127
Infineon Technologies
IRFIZ24EPBF
NXP USA Inc.
PHB193NQ06T,118
Vishay Siliconix
IRFU014
Toshiba Semiconductor and Storage
TPC6008-H(TE85L,FM
Infineon Technologies
BSP171PL6327HTSA1
IXYS
IXTC102N25T
Fairchild Semiconductor
FQB5P10TM
GeneSiC Semiconductor
GA10JT12-247
Infineon Technologies