IRFR9120TRLPBF-BE3
Vishay Siliconix
        
                
                                Vishay Siliconix                            
                        
                                MOSFET P-CH 100V 5.6A DPAK                            
                        $1.72
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.72000
                                        500+
                                            $1.7028
                                        1000+
                                            $1.6856
                                        1500+
                                            $1.6684
                                        2000+
                                            $1.6512
                                        2500+
                                            $1.634
                                        Exquisite packaging
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                    The IRFR9120TRLPBF-BE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.                
            Specifications
- Product Status: Active
 - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 100 V
 - Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 10V
 - Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252AA
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
