IRFS4115PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 195A D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$5.20000
10+
$4.64700
100+
$3.81040
500+
$3.08552
1,000+
$2.60224
Exquisite packaging
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Meet the IRFS4115PBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFS4115PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12.1mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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