IRFS59N10DPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 59A D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$4.18000
10+
$3.76200
100+
$3.12700
500+
$2.57652
1,000+
$2.20951
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRFS59N10DPBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRFS59N10DPBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
BSB019N03LX G
STMicroelectronics
STH52N10LF3-2AG
Infineon Technologies
IRLR8721TRPBF
Vishay Siliconix
SI7440DP-T1-GE3
Infineon Technologies
IRLR2908TRLPBF-INF
Taiwan Semiconductor Corporation
TSM160P04LCRHRLG
STMicroelectronics
STW75N20
Infineon Technologies
IPP80N06S3-07
Infineon Technologies
BSP129E6327
Nexperia USA Inc.