IRFU3412PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 48A IPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFU3412PBF from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IRFU3412PBF offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251AA)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
onsemi
FQD3N30TM
NXP USA Inc.
PSMN8R5-100PS127
Infineon Technologies
SPP06N80C3XK
IXYS
IXCY01N90E
Vishay Siliconix
SI4110DY-T1-GE3
Fairchild Semiconductor
FQB6N25TM
Nexperia USA Inc.
PMV48XP/MIR
Alpha & Omega Semiconductor Inc.
AON6152
NXP USA Inc.
PHK5NQ15T518
IXYS