IRG7PH35U-EP
Infineon Technologies
Infineon Technologies
IGBT TRENCH 1200V 55A TO247AD
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The IRG7PH35U-EP Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRG7PH35U-EP ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRG7PH35U-EP into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 210 W
- Switching Energy: 1.06mJ (on), 620µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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