IRG7PSH54K10DPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 120A 520W TO274AA
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Upgrade your power management systems with the IRG7PSH54K10DPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG7PSH54K10DPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG7PSH54K10DPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Power - Max: 520 W
- Switching Energy: 4.8mJ (on), 2.8mJ (off)
- Input Type: Standard
- Gate Charge: 435 nC
- Td (on/off) @ 25°C: 110ns/490ns
- Test Condition: 600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 170 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: SUPER-247™ (TO-274AA)
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