IRG7T100HF12B
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 200A POWIR 62
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Infineon Technologies's IRG7T100HF12B sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the IRG7T100HF12B in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the IRG7T100HF12B power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 680 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR® 62 Module
- Supplier Device Package: POWIR® 62
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