IRG8CH106K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 110A DIE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IRG8CH106K10F Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IRG8CH106K10F ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IRG8CH106K10F for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 700 nC
- Td (on/off) @ 25°C: 80ns/380ns
- Test Condition: 600V, 110A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Littelfuse Inc.
LGB18N40ATH
Infineon Technologies
IRG7CH35UEF
Infineon Technologies
SIGC05T60SNCX1SA1
Infineon Technologies
SIGC14T60SNCX1SA5
onsemi
AFGHL25T120RL
Infineon Technologies
SIGC05T60SNCX7SA1
Littelfuse Inc.
LGD8201ATI
Infineon Technologies
SIGC12T60NCX1SA1
Infineon Technologies
SIGC54T60R3EX7SA1
Infineon Technologies