IRG8CH37K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 100A DIE
$0.00
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Reference Price (USD)
1,332+
$3.67033
Exquisite packaging
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The IRG8CH37K10F by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IRG8CH37K10F is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 35ns/190ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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